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Diodes IncorporatedZDT1048TAGP BJT
Trans GP BJT NPN 17.5V 5A 2750mW 8-Pin SM T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Dual Dual Collector | |
| 2 | |
| 50 | |
| 17.5 | |
| 5 | |
| -55 to 150 | |
| 0.5 | |
| 1.1@100mA@5A | |
| 0.045@10mA@0.5A|0.075@10mA@1A|0.16@10mA@2A|0.24@100mA@5A|0.3@50mA@5A | |
| 5 | |
| 10 | |
| 280@10mA@2V|300@0.5A@2V|300@1A@2V|250@5A@2V|50@20A@2V | |
| 2750 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.6 mm |
| Verpackungsbreite | 3.5 mm |
| Verpackungslänge | 6.6 mm |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | SM |
| Lieferantenverpackung | SM |
| 8 | |
| Leitungsform | Gull-wing |
Compared to other transistors, the NPN ZDT1048TA general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2750 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 17.5 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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