| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 4 | |
| 71@10V | |
| 5.9@10V | |
| 5.9 | |
| 280@15V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungsbreite | 1.8 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23F |
| 3 | |
| Leitungsform | Flat |
Create an effective common drain amplifier using this SSM3J334R,LF power MOSFET from Toshiba. Its maximum power dissipation is 1000 mW. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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