| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±6 | |
| 0.485 | |
| 700@4.5V | |
| 0.75@4.5V | |
| 250 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.6(Max) mm |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.7(Max) mm |
| Leiterplatte geändert | 6 |
| Lieferantenverpackung | SC-89 |
| 6 |
Make an effective common source amplifier using this SI1024X-T1-GE3 power MOSFET from Vishay. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes TrenchFET technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.