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MagnaChip SemiconductorMDU5593SVRHMOSFETs
Trans MOSFET N-CH 30V 13A/21A 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Dual | |
| Enhancement | |
| N | |
| 2 | |
| 30 | |
| ±20 | |
| 3 | |
| 13@FET 1|21@FET 2 | |
| 100 | |
| 1@FET 1|500@FET 2 | |
| 8@10V@FET 1|3.3@10V@FET 2 | |
| 9.5@4.5V|18@10V@FET 1|12.6@4.5V|26.1@10V@FET 2 | |
| 18@FET 1|26.1@FET 2 | |
| 1142@15V@FET 1|1785@15V@FET 2 | |
| 2200@FET 1|2500@FET 2 | |
| 6.9@FET 1|14.5@FET 2 | |
| 12.1@FET 1|8.9@11.9@FET 2 | |
| 28.5@FET 1|45.5@FET 2 | |
| 9.9@FET 1|11.9@FET 2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.1(Max) |
| Verpackungsbreite | 6.1(Max) |
| Verpackungslänge | 5.1(Max) |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this MDU5593SVRH power MOSFET from MagnaChip Semiconductor. Its maximum power dissipation is 2200@FET 1|2500@FET 2 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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