| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 320 | |
| 3.5@10V | |
| 430@10V | |
| 430 | |
| 26000@25V | |
| 1000000 | |
| 177 | |
| 46 | |
| 73 | |
| 36 | |
| -55 | |
| 175 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 5.1(Max) |
| Verpackungsbreite | 14(Max) |
| Verpackungslänge | 16.05(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-268 |
| 3 |
Increase the current or voltage in your circuit with this IXFT320N10T2 power MOSFET from Ixys Corporation. Its maximum power dissipation is 1000000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
KI-Systeme in der Medizin
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