| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 9.7 | |
| 160@10V | |
| 33(Max)@10V | |
| 33(Max) | |
| 670@25V | |
| 42000 | |
| 25 | |
| 28 | |
| 34 | |
| 8.5 | |
| -55 | |
| 175 | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16.12(Max) mm |
| Verpackungsbreite | 4.83(Max) mm |
| Verpackungslänge | 10.63(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 Full-Pak |
| 3 | |
| Leitungsform | Through Hole |
This IRFI530GPBF power MOSFET from Vishay can be used for amplification in your circuit. Its maximum power dissipation is 42000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.