Infineon Technologies AGIPP111N15N3GXKSA1MOSFETs
Trans MOSFET N-CH 150V 83A 3-Pin(3+Tab) TO-220 Tube
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 150 | |
| ±20 | |
| 4 | |
| 83 | |
| 11.1@10V | |
| 41@10V | |
| 41 | |
| 3230@75V | |
| 214000 | |
| 9 | |
| 35 | |
| 32 | |
| 17 | |
| -55 | |
| 175 | |
| Tube | |
| 9.4@10V|9.1@10V|9.5@8V|9.2@8V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 9.45(Max) mm |
| Verpackungsbreite | 4.57(Max) mm |
| Verpackungslänge | 10.36(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220 |
| 3 |
Use Infineon Technologies' IPP111N15N3GXKSA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 214000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology.
| EDA / CAD Models |
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