Infineon Technologies AGIPB180N04S4H0ATMA1MOSFETs
Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 4 | |
| 180 | |
| 1.1@10V | |
| 173@10V | |
| 173 | |
| 13800@25V | |
| 250000 | |
| 49 | |
| 24 | |
| 50 | |
| 44 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 0.9@10V | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 4.4 mm |
| Verpackungsbreite | 9.25 mm |
| Verpackungslänge | 10 mm |
| Leiterplatte geändert | 6 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | D2PAK |
| 7 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPB180N04S4H0ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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