Infineon Technologies AGIPA60R380P6XKSA1MOSFETs
Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 20 | |
| 4.5 | |
| 10.6 | |
| 100 | |
| 1 | |
| 380@10V | |
| 19@10V | |
| 19 | |
| 877@100V | |
| 83000 | |
| 7 | |
| 6 | |
| 33 | |
| 12 | |
| -55 | |
| 150 | |
| Tube | |
| 342@10V | |
| Befestigung | Through Hole |
| Verpackungshöhe | 16 mm |
| Verpackungsbreite | 4.7 mm |
| Verpackungslänge | 10.5 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
Create an effective common drain amplifier using this IPA60R380P6XKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 83000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with coolmos p6 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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