Diodes IncorporatedBC847BVNQ-7GP BJT
Trans GP BJT NPN/PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN|PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA@NPN|0.95@5mA@100mA@PNP | |
| 0.25@0.5mA@10mA|0.6@5mA@100mA@NPN|0.3@0.5mA@10mA|0.65@5mA@100mA@PNP | |
| 0.1 | |
| 200@2mA@5V@NPN|220@2mA@5V@PNP | |
| 150 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.6(Max) |
| Verpackungsbreite | 1.2 |
| Verpackungslänge | 1.6 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-563 |
| 6 | |
| Leitungsform | Flat |
If you require a general purpose BJT that can handle high voltages, then the npn and PNP BC847BVNQ-7 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.